| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB65R190CFDA | 650V、N 通道、最大 190 mΩ、汽车 MOSFET、D2PAK、CoolMOS ™ CFDA 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ; | INFINEON 英飞凌 | ||
IPB65R190CFDA | Metal Oxide Semiconductor Field Effect Transistor 文件:2.19785 Mbytes Page:16 Pages | INFINEON 英飞凌 | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f | ISC 无锡固电 | |||
650V CoolMOS C6 CFD POWER Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic | INFINEON 英飞凌 | |||
丝印代码:65F6190;Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Applic | INFINEON 英飞凌 | |||
Metal Oxide Semiconductor Field Effect Transistor 文件:2.19785 Mbytes Page:16 Pages | INFINEON 英飞凌 | |||
650V N-Channel MOSFET 文件:905.83 Kbytes Page:8 Pages | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美浦森半导体深圳市美浦森半导体有限公司 |
IPB65R190CFDA产品属性
- 类型
描述
- OPN:
IPB65R190CFDAATMA1
- Qualification:
Automotive
- Package name:
PG-TO263-3
- VDS max:
650 V
- RDS (on) @10V max:
190 mΩ
- ID @25°C max:
17.5 A
- QG typ @10V:
68 nC
- Special Features:
automotive
- Polarity:
N
- VGS(th) min:
3.5 V
- VGS(th) max:
4.5 V
- Technology:
CoolMOS™ CFDA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
9298 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
23+ |
PG-TO263-3 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
25+ |
PG-TO263 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
25+ |
TO-263 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
25+ |
PG-TO263 |
6000 |
郑重承诺只做原装正品现货 |
|||
Infineon(英飞凌) |
25+ |
TO-263 |
12000 |
原装品质,专业护航,省心采购 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
INFINEON |
23+ |
HIGH POWER_LEGACY |
8000 |
只做原装现货 |
IPB65R190CFDA芯片相关品牌
IPB65R190CFDA规格书下载地址
IPB65R190CFDA参数引脚图相关
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DdatasheetPDF页码索引
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