CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.52Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.52Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Extremely low switching loss

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Excellent stability and uniformity

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Extremely low switching loss

文件：396.89 Kbytes Page：9 Pages