位置：首页 > IC中文资料第579页 > IPB60R280C6XT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 |   | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | |
IPB60R280C6XT产品属性
- 类型
描述
- 型号
IPB60R280C6XT
- 制造商
Infineon Technologies AG
- 功能描述
COOLM - Cut TR(SOS)
- 制造商
Infineon Technologies
- 功能描述
Infineon IPB60R280C6XT MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-263-2 |
19850 |
原装正品,假一赔十 |
|||
Infineon/英飞凌 |
25+ |
TO-263-2 |
25000 |
原装正品,假一赔十! |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
Infineon Technologies |
21+ |
D2PAK(TO-263AB) |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon(英飞凌) |
25+ |
TO-263-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon/英飞凌 |
21+ |
TO-263-2 |
6820 |
只做原装,质量保证 |
|||
Infineon/英飞凌 |
24+ |
TO-263-2 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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IPB60R280C6XT规格书下载地址
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DdatasheetPDF页码索引
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