IPB60R190C6价格

参考价格:¥8.9585

型号:IPB60R190C6 品牌:Infineon 备注:这里有IPB60R190C6多少钱,2025年最近7天走势,今日出价,今日竞价,IPB60R190C6批发/采购报价,IPB60R190C6行情走势销售排行榜,IPB60R190C6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPB60R190C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

IPB60R190C6

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Ultra-fast body diode • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard swit

ISC

无锡固电

IPB60R190C6

600V CoolMOS C6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

IPB60R190C6

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

IPB60R190C6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27182 Mbytes Page:19 Pages

Infineon

英飞凌

600V CoolMOS C6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.27182 Mbytes Page:19 Pages

Infineon

英飞凌

IPB60R190C6产品属性

  • 类型

    描述

  • 型号

    IPB60R190C6

  • 功能描述

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-26 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
TO263
23+
6000
原装现货有上库存就有货全网最低假一赔万
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
INFINEON/英飞凌
22+
TO263
12245
现货,原厂原装假一罚十!
INFINEON/英飞凌
25+
TO-263
15000
全新原装现货,价格优势
Infineon(英飞凌)
23+
PG-TO263
19850
原装正品,假一赔十
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
INFINEON/英飞凌
2223+
TO-263
26800
只做原装正品假一赔十为客户做到零风险
Infineon/英飞凌
24+
PG-TO263
25000
原装正品,假一赔十!
INFINEON
20+
TO263
640
全新原装公司现货

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