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IPB60R190C6价格
参考价格:¥8.9585
型号:IPB60R190C6 品牌:Infineon 备注:这里有IPB60R190C6多少钱,2025年最近7天走势,今日出价,今日竞价,IPB60R190C6批发/采购报价,IPB60R190C6行情走势销售排行榜,IPB60R190C6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB60R190C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | ||
IPB60R190C6 | isc N-Channel MOSFET Transistor • FEATURES • With TO-263(D2PAK) packaging • Ultra-fast body diode • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages, hard swit | ISC 无锡固电 | ||
IPB60R190C6 | 600V CoolMOS C6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | ||
IPB60R190C6 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | ||
IPB60R190C6 | Metal Oxide Semiconductor Field Effect Transistor 文件:1.27182 Mbytes Page:19 Pages | Infineon 英飞凌 | ||
600V CoolMOS C6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | |||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de | ISC 无锡固电 | |||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi | Infineon 英飞凌 | |||
Metal Oxide Semiconductor Field Effect Transistor 文件:1.27182 Mbytes Page:19 Pages | Infineon 英飞凌 |
IPB60R190C6产品属性
- 类型
描述
- 型号
IPB60R190C6
- 功能描述
MOSFET 600V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
TO263 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
15000 |
全新原装现货,价格优势 |
|||
Infineon(英飞凌) |
23+ |
PG-TO263 |
19850 |
原装正品,假一赔十 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON/英飞凌 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
20+ |
TO263 |
640 |
全新原装公司现货
|
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IPB60R190C6规格书下载地址
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DdatasheetPDF页码索引
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