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IPB60R125C6价格
参考价格：￥15.2079
型号：IPB60R125C6 品牌：Infineon 备注：这里有IPB60R125C6多少钱，2024年最近7天走势，今日出价，今日竞价，IPB60R125C6批发/采购报价，IPB60R125C6行情走势销售排行榜，IPB60R125C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB60R125C6 | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPB60R125C6 | IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB60R125C6 | MOSFETMetalOxideSemiconductorFieldEffectTransistor Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPB60R125C6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.3131 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.3131 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.125Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustd | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤125mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.3131 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPB60R125C6产品属性
- 类型
描述
- 型号
IPB60R125C6
- 功能描述
MOSFET 600V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
|||
INFINEON/英飞凌 |
21+23+ |
PG-TO263-3 |
8933 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
|||
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17059 |
原装进口假一罚十 |
|||
ST |
2022+ |
TO-220 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
INFINEON |
23/22+ |
TO263 |
2000 |
全线可订货.含税开票 |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
624 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
IPB60R125C6芯片相关品牌
IPB60R125C6规格书下载地址
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