CoolMos Power Transistor

Features • Lowest figure of merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Ha

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.25Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤250mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Qualified for industrial grade applications according to JEDEC1)