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IPA价格
参考价格：￥16.0083
型号：IPA028N08N3G 品牌：Infineon 备注：这里有IPA多少钱，2024年最近7天走势，今日出价，今日竞价，IPA批发/采购报价，IPA行情走势销售排行榜，IPA报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
OptiMOSTM 3 Power-Transistor, 40 V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
isc N-Channel MOSFET Transistor •DESCRITION •Deviceforuseinawidevarietyofapplications •FEATURES •Lowdrain-sourceon-resistance:RDS(on)≤3mΩ(max) •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc N-Channel MOSFET Transistor •DESCRITION •Deviceforuseinawidevarietyofapplications •FEATURES •Lowdrain-sourceon-resistance:RDS(on)≤3.7mΩ(max) •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS(TM)3 Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS(TM)3 Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS(TM)3 Power-Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Superior thermal resistance Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor, 100 V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor, 100 V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM 5 Power-Transistor, 100 V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM 5 Power-Transistor, 80 V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplicatio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplicatio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM Power-Transistor, 60 V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Superior thermal resistance Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM Power-Transistor, 60 V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS3 Power-Transistor Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM 5 Power-Transistor, 100 V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3 Power Transistor Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplic | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS3 Power-Transistor Features •N-channel,normallevel •EcellectgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM 3 Power-Transistor, 200 V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS Power Transistor Features •WorldwidebestRDS(on)inTO220 •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
500V Superjunction MOSFET for Consumer and Lighting Applications 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
500V CoolMOS??CE Power MOSFET 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMos Power Transistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) CoolMOSCPisdesignedfor: •Hards | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMos Power Transistor Features •LowestfigureofmeritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Ha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
500V Superjunction MOSFET for Consumer and Lighting Applications 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
500V CoolMOS??CE Power MOSFET 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMos Power Transistor Features •LowestfigureofmeritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) CoolMOSCPisdesignedfor: •Harda | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOSTM Power Transistor Features •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC0)fortargetapplications CoolMOSCPisdesignedfor: •HardandsoftswitchingSMPStopologies •CC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
500V CoolMOS CE Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
500V Superjunction MOSFET for Consumer and Lighting Applications 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
500V CoolMOS??CE Power MOSFET 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSTM Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC0)fortargetapplications CoolMOSCPisdesignedfor: •HardandsoftswitchingSMPStopologies •DC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
500V CoolMOS??CE Power MOSFET 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
500V Superjunction MOSFET for Consumer and Lighting Applications 500VCoolMOS™CEPowerMOSFET TheCoolMOS™CEisanewtechnologyplatformofInfineon’smarketleadinghighvoltagepowerMOSFETsdesignedaccordingtotherevolutionarysuperjunction(SJ)principle. 500VCEportfolioprovidesallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeas | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMos Power Transistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) CoolMOSCPisdesignedfor: •Hard- | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IPA产品属性
- 类型
描述
- 型号
IPA
- 制造商
Electrolube
- 功能描述
ISOPROPANOL, TIN, 1L
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-220 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon Technologies |
23+ |
PG-TO220-FP |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon |
1931+ |
N/A |
774 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
20+ |
TO-220F |
90000 |
全新原装正品/库存充足 |
|||
INFINEON |
23+ |
TO220F |
8653 |
全新原装优势 |
|||
INFINEON/英飞凌 |
TO-220FullPAK |
265209 |
假一罚十原包原标签常备现货! |
||||
INFINEON-英飞凌 |
24+25+/26+27+ |
车规-元器件 |
13788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Infineon/英飞凌 |
23+ |
TO220-3 |
6000 |
原装正品，支持实单 |
|||
INFINEON/英飞凌 |
22+ |
TO220-3 |
93574 |
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IPA数据表相关新闻
IP808A
IP808A-ICPLUS九阳
2022-4-22IP65防护级断路器/开关-3120-N系列3120-N324-P7T1-W01D-5A
ETA的3120-N系列断路器/开关是恶劣环境应用的理想选择
2019-9-5IPA50R190CE顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566017727837185（微信75056055）QQ：782954141
2019-3-8IPA50R280CE顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566017727837185（微信75056055）QQ：782954141
2019-3-8IPA50R380CE顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566017727837185（微信75056055）QQ：782954141
2019-3-8IP78M05H-正固定电压稳压器
特点•输出电流高达0.5A的•输出电压，12，15V•0.01％/V线路规例•0.3％/A负载调整•过热保护•短路保护•输出晶体管SOA保护•1％电压容差（-A版本）说明该电压IP140MA和IP78M00A系列监管机构是固定用于输出稳压器地方，卡上的电压调节。这些设备可在5，12和15伏的选择，并能够在提供超过500mA的过温度。在A
2013-1-26
DdatasheetPDF页码索引
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