8 Port PSE Controller

IP808 is an 8-port PSE (Power Sourcing Equipment) controller IC for PoE (Power over Ethernet) systems. It integrates power, analog, and logic circuits into a single chip, and can be used for Midspans and Endpoint PSE applications.\n IP808 meets all IEEE 802.3AF-2003 requirements, such as multi-point • IEEE 802.3AF-2003 and 802.3AT-2009 compliant 
\n• Single DC power supply voltage input (45~57V) 
\n• Wide temperature range: -40°C~+85°C 
\n• Supplies 8 independent power ports 
\n• Built-in power FETs 
\n• I2C Bus to access up to 8 x IP808 devices 
\n• Continuous system monitoring for every port ;

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

8-Bit Microprocessor

Bi-directional DC Motor Driver

DESCRIPTIONS IP8082BL is a 1-CH forward/reverse DC motor driver with braking and speed control. It is suitable for loading motor of CD-P / VCD-P/DVD-P systems and TOYS. By adjusting the voltage of VCTL pin, The motor speed will be easily controlled. FEATURES - 1-CH forward/reverse control

8-Port PSE Controller for PoE Systems

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)