型号 功能描述 生产厂家 企业 LOGO 操作
INA849DR

INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier

1 Features • Ultra-low noise: 1-nV/√Hz input voltage noise (typical) • Precision super-beta input performance: – Low offset voltage: 35 μV (maximum) – Low offset voltage drift: 0.4 μV/°C (maximum) – Low input bias current: 20 nA (maximum) – Low gain drift: 5 ppm/°C for G = 1 (maximum) • Ba

TI

德州仪器

INA849DR

INA849 Ultra-Low-Noise (1 nV/?숰z), High-Bandwidth, Instrumentation Amplifier

文件:1.94382 Mbytes Page:26 Pages

TI

德州仪器

INA849DR

INA849 Ultra-Low-Noise (1 nV/?숰z), High-Bandwidth, Instrumentation Amplifier

文件:3.21241 Mbytes Page:36 Pages

TI

德州仪器

INA849DR

INA849 Ultra-Low-Noise (1 nV/?숰z), High-Bandwidth, Instrumentation Amplifier

文件:3.28236 Mbytes Page:36 Pages

TI

德州仪器

INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier

1 Features • Ultra-low noise: 1-nV/√Hz input voltage noise (typical) • Precision super-beta input performance: – Low offset voltage: 35 μV (maximum) – Low offset voltage drift: 0.4 μV/°C (maximum) – Low input bias current: 20 nA (maximum) – Low gain drift: 5 ppm/°C for G = 1 (maximum) • Ba

TI

德州仪器

INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier

1 Features • Ultra-low noise: 1-nV/√Hz input voltage noise (typical) • Precision super-beta input performance: – Low offset voltage: 35 μV (maximum) – Low offset voltage drift: 0.4 μV/°C (maximum) – Low input bias current: 20 nA (maximum) – Low gain drift: 5 ppm/°C for G = 1 (maximum) • Ba

TI

德州仪器

INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier

1 Features • Ultra-low noise: 1-nV/√Hz input voltage noise (typical) • Precision super-beta input performance: – Low offset voltage: 35 μV (maximum) – Low offset voltage drift: 0.4 μV/°C (maximum) – Low input bias current: 20 nA (maximum) – Low gain drift: 5 ppm/°C for G = 1 (maximum) • Ba

TI

德州仪器

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

R.F.POWER AMPLIFIER, OSCILLATOR, A.F.POWER AMPLIFIER, OR MODULATOR

文件:936.79 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R.F.POWER AMPLIFIER, OSCILLATOR, A.F.POWER AMPLIFIER, OR MODULATOR

文件:936.79 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R.F.POWER AMPLIFIER, OSCILLATOR, A.F.POWER AMPLIFIER, OR MODULATOR

文件:936.79 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

R.F.POWER AMPLIFIER, OSCILLATOR, A.F.POWER AMPLIFIER, OR MODULATOR

文件:936.79 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

更新时间:2025-12-30 10:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
2022+
8000
原厂原装,假一罚十
TI(德州仪器)
2526+
SOIC-8
50000
只做原装优势现货库存,渠道可追溯
TI/德州仪器
23+
SOP8
2000
TI(德州仪器)
25+
N/A
6000
原装,请咨询
TI(德州仪器)
26+
N/A
360000
只有原装 可配单
TI
24+
SOP
9000
只做原装正品 有挂有货 假一赔十
TI
23+
NA
6800
原装正品,力挺实单
TI(德州仪器)
24+
SOIC-8
9498
原厂可订货,技术支持,直接渠道。可签保供合同
TI德州仪器
22+
SOP8
2500
原装正品现货假一罚十
TI
25+
SOP-8
8000
原厂原装,价格优势,欢迎洽谈!

INA849DR数据表相关新闻