位置:首页 > IC中文资料 > INA183

型号 功能描述 生产厂家 企业 LOGO 操作
INA183

INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

INA183

2.7V 至 26V 高精度电流感应放大器

The INA183 is a high-precision voltage-output, current-shunt monitor (also called current-sense amplifier) commonly used for overcurrent protection, precision-current measurement for system optimization, or in closed-loop feedback circuits. This device can sense drops across shunt resistors at commo • Wide Common-Mode Range: 2.7 V to 26 V\n• Accuracy: \n• 0.5-µV/°C Offset Drift (Maximum)\n• Choice of Gains: \n• INA183A2: 100 V/V\n• Quiescent Current: 130 µA (Maximum)\n• Package: 5-Pin SOT-23;

TI

德州仪器

INA183

INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BSQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BSQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BSQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BTQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BTQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BTQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

1 Features • Wide Common-Mode Range: 2.7 V to 26 V • Offset Voltage: ±170 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error ±0.4% (Maximum Over Temperature): – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain Drift (Maximum) • Choice of Gains: – INA183A

TI

德州仪器

丝印代码:2BRQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

丝印代码:2BRQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

丝印代码:2BSQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

丝印代码:2BSQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

丝印代码:2BTQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

丝印代码:2BTQ;INA183 2.7-V to 26-V, High-Precision Current Sense Amplifier

文件:1.88511 Mbytes Page:24 Pages

TI

德州仪器

包装:盒 描述:INA183 CURRENT SENSE AMPLIFIER E 开发板,套件,编程器 评估板 - 运算放大器

TI

德州仪器

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

MOTOROLA

摩托罗拉

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

VISHAYVishay Siliconix

威世威世科技公司

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

MOTOROLA

摩托罗拉

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA

NTE

INA183产品属性

  • 类型

    描述

  • Common mode voltage (Min) (V):

    2.7

  • Input offset (+/-) (Max) (uV):

    150

  • Input offset drift (+/-) (Typ) (uV/C):

    0.5

  • Gain (V/V):

    100

  • Gain error (%):

    0.4

  • Gain error drift (+/-) (Max) (ppm/°C):

    10

  • CMRR (Min) (dB):

    100

  • Bandwidth (kHz):

    80

  • Supply voltage (Max) (V):

    26

  • Supply voltage (Min) (V):

    2.7

  • Iq (Max) (mA):

    0.13

  • Number of channels (#):

    1

  • Comparators (#):

    0

  • Features:

    High precision

  • Rating:

    Catalog

  • Operating temperature range (C):

    -40 to 125

更新时间:2026-5-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOT-23-5
11580
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
SOT-23-5
7786
原装正品现货,原厂订货,可支持含税原型号开票。
Texas Instruments
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI
23+
N/A
7000
TI(德州仪器)
25+
SOT-23-5
500000
源自原厂成本,高价回收工厂呆滞
TI
24+
con
10000
查现货到京北通宇商城
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
26+
原厂封装
10280
TI/德州仪器
25+
原厂封装
10280

INA183数据表相关新闻