Quad USB High-Side Power Switch with Fault Detection

The IMP2524 and IMP2527 are complete power management solutions for bus-powered and self-powered USB hubs. Each device contains four independent power switches and fault detection logic. The IMP2524 channel resistance is a low 140mΩ maximum and the IMP2527 channel resistance is 300Ω maximum. Both

通用串行总线电源管理电路（USB Power Switches）

Quad USB Hiigh--Siide Power Swiittch wiitth Faulltt Dettecttiion

The IMP2524 and IMP2527 are complete power management solutions for bus-powered and self-powered USB hubs. Each device contains four independent power switches and fault detection logic. The IMP2524 channel resistance is a low 140mΩ maximum and the IMP2527 channel resistance is 300Ω maximum. Both

Quad USB Hiigh--Siide Power Swiittch wiitth Faulltt Dettecttiion

The IMP2524 and IMP2527 are complete power management solutions for bus-powered and self-powered USB hubs. Each device contains four independent power switches and fault detection logic. The IMP2524 channel resistance is a low 140mΩ maximum and the IMP2527 channel resistance is 300Ω maximum. Both

Quad USB Hiigh--Siide Power Swiittch wiitth Faulltt Dettecttiion

The IMP2524 and IMP2527 are complete power management solutions for bus-powered and self-powered USB hubs. Each device contains four independent power switches and fault detection logic. The IMP2524 channel resistance is a low 140mΩ maximum and the IMP2527 channel resistance is 300Ω maximum. Both

Quad USB Hiigh--Siide Power Swiittch wiitth Faulltt Dettecttiion

The IMP2524 and IMP2527 are complete power management solutions for bus-powered and self-powered USB hubs. Each device contains four independent power switches and fault detection logic. The IMP2524 channel resistance is a low 140mΩ maximum and the IMP2527 channel resistance is 300Ω maximum. Both

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance.