SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •