CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

CoolSiC ™ MOSFET 650 V G2，采用 Q-DPAK 顶部冷却封装，7 mΩ

MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •