位置：首页 > IC中文资料 > IMBG120R090M1H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBG120R090M1H | CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology 文件：1.26282 Mbytes Page：17 Pages | Infineon 英飞凌 |   | |
IMBG120R090M1H | CoolSiC ™ 1200 V SiC 沟槽MOSFET，采用TO-263-7封装 | Infineon 英飞凌 | | |
SiC N-Channel MOSFET FEATURES ·Very low switching losses ·Wide gate-source voltage range ·Efficiency improvement APPLICATIONS ·Solar Inverters ·Industrial UPS ·Industrial SMPS ·Charger | ISC 无锡固电 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.1791 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.27812 Mbytes Page：17 Pages | Infineon 英飞凌 | |
更新时间：2025-10-1 9:30:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
PG-TO263-7 |
1000 |
22+ |
|||
Infineon |
24+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Infineon(英飞凌) |
24+ |
TO-263-7 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
24+ |
TO-263-7 |
60000 |
全新原装现货 |
|||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271679邹小姐 |
|||
INFINEON |
23+ |
N/A |
7000 |
||||
INFINEON/英飞凌 |
24+ |
PG-TO263-7 |
2000 |
绝对原装正品现货 假一罚十 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
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IMBG120R090M1H规格书下载地址
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DdatasheetPDF页码索引
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