封装/外壳：圆柱形，有螺纹 - M6 包装：散装 描述：SENSOR PROX INDUCTIVE 1MM CYL 2M 传感器，变送器 接近传感器 - 工业

接近传感器

POWER TRANSISTORS(0.5A,350V,30W)

NPN SILICON HIGH-VOLTAGE TRANSISTORS . . . useful for general–purpose, high voltage applications requiring high fT. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 V (Min) @ IC = 2.5 mA • DC Current Gain — hFE = 40 (Min) @ IC = 100 mA — MJE2361T • Current–Gain–Bandwidth P

0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS

NPN Silicon High-Voltage Transistor . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc • DC Current Gain — hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T • Current–Gain–Bandwidth Product —

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages

HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

文件：274.77 Kbytes Page：17 Pages