Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated

Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test volt

Optocoupler, Phototransistor Output, (Dual, Quad Channel), 110 °C Rated

Operating temperature from -55 °C to +110 °C\nIdentical channel to channel footprint\nDual and quad packages feature: - Reduced board space - Lower pin and parts count - Better channel to channel CTR match - Improved common mode rejection;

Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated

Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test volt

Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated

Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test volt

Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated

Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test volt

Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated

Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test volt

晶体管输出光电耦合器 Phototransistor Out Dual CTR > 160-320%

PNP Epitaxial Silicon Transistor

For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage

Integrated Circuit B/W TV Tuner Bandswitch Circuit

Description: The NTE1615 is an integrated circuit in a 9–Lead SIP type package designed for use as a B/W TV tuner bandswitch circuit. Features: Continuous VHF Band Tuning without High and Low Band Switching Operation Low Drain Current from Tuning Reference Voltage Supply High Brea

Ultra-fast POWER planar??Rectifiers 16 A, 50-200 V

文件：109.71 Kbytes Page：4 Pages

Ultra-fast POWERplanar??Rectifiers 16 A, 50-200 V

文件：110.56 Kbytes Page：4 Pages

Ultra-high intensity LEDs

文件：41.57 Kbytes Page：1 Pages