PNP Epitaxial Silicon Transistor

For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-0.=25V(Max) @IC= -4A APPLICATIONS · Low frequency amplifier

PNP Epitaxial Silicon Transistor

Push - Pull Audiophile - Output (1608-1650 A Series)

PUSH - PULL EASY HOOK-UP CLASSIC TUBE TYPE - ULTRA-LINEAR OUTPUT TRANSFORMERS • NEW & Improved version of our 1608-1650 series output transformers (re-designed secondaries for easy hookup of secondary loads) • Designed for push-pull tube output circuits. • Enclosed (shielded), 4 slot, above

1615A 1310 nm DFB Laser Module

1615A 1310 nm DFB Laser Module The 1615A 1310 nm DFB laser modules are designed for both wireless and distributed antenna system applications. This highly-linear OC-48 pinout compatible device delivers superior distortion performance over an enhanced temperature range of -40°C to +85°C. Features

Precision Capacitance Measurement System

Features Power: 105 to 125 V and 210 to 250 V, 50 to 400 Hz, 22 W for oscillator. Dimensions: Bench: 48.3 cm H x 50.2 cm W x 28.0 cm D (19 x 19.75 x 11) Weight: 27 kg (59 lb.) net, 44 kg (96 lb.) shipping

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current

TEST TIPS AND PLUGS

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