Low-Cost Passive Input RS-485 and RS-422 Isolated Transceivers

Features • 5 Mbps data rate • 3 V to 5 V power supplies • Supports up to 32 nodes • 15 kV bus ESD protection • 20 kV/μs typical common mode rejection • No carrier or clock for low EMI emissions and susceptibility • −40 °C to +85 °C temperature range • Thermal shutdown protection • 2500 VR

Low-Cost Passive-Input Isolated RS422 Xcvr, 2.5 kV, Narrow SOIC

Features include 3.3 V or 5.0 V input logic, 15 kV bus ESD protection, 5 Mbps data rate, and 20 kV per microsecond transient immunity. 16-pin narrow-body (0.15'') SOIC package.

Low-Cost Passive Input RS-485 and RS-422 Isolated Transceivers

Features • 5 Mbps data rate • 3 V to 5 V power supplies • Supports up to 32 nodes • 15 kV bus ESD protection • 20 kV/μs typical common mode rejection • No carrier or clock for low EMI emissions and susceptibility • −40 °C to +85 °C temperature range • Thermal shutdown protection • 2500 VR

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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