PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION The IL211A/212A/213A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL2

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION The IL211AT/212AT/213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. Th

Optocoupler, Phototransistor Output, With Base Connection in

Description The IL211AT/ IL212AT/ IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

DESCRIPTION The IL211AT, IL212AT, IL213AT are optically coupled pairs with a gallium arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and outp

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

FEATURES • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8 surface mountable package • Compatible with dual wave, vapor phase and IR reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • UL1577, fil

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

DESCRIPTION\nThe IL211AT/212AT/213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL • High Current Transfer Ratio\n   IL211AT—20% Minimum\n   IL212AT—50% Minimum\n   IL213AT—100% Minimum\n• Isolation Voltage, 2500 VACRMS\n• Electrical Specifications Similar to\n   Standard 6 Pin Coupler\n• Industry Standard SOIC-8 Surface\n   Mountable Package\n• Standard Lead Spacing, ;

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

FEATURES • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8 surface mountable package • Compatible with dual wave, vapor phase and IR reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • UL1577, fil

Optocoupler, Phototransistor Output with Base Connection

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Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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