Best-in-Class tradeoff between conduction and switching losses

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分立式IGBT

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 75A FAST DIODE TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

SUPERIOR GaN DTQ75N65GS – 180mΩ, 650V GaN HEMT

• 650V, 180mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface circuit • Dir

SUPERIOR GaN DTQ75N65GS – 180mΩ, 650V GaN HEMT

• 650V, 180mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface circuit • Dir

650V/75A Trench Field Stop IGBT

Features 650V 75A,VCE(sat)(typ.) = 2.3V Field Stop IGBT Technology 10μs Short Circuit Capability Square RBSOA Positive VCE (on) Temperature Coefficient.