IGBT with integrated diode in packages offering space saving advantage

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?쏳C-D Fast?? RC-Drives IGBT optimized for high switching frequency

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RC-Drive and RC-Drive Fast

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IGBT with integrated diode in packages offering space saving advantage

文件：1.93 Mbytes Page：16 Pages

Optimized Eon, Eoff and Qrr for low switching losses

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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