位置：首页 > IC中文资料 > IKB40N65ES5
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB40N65ES5 | High speed switching series 5th generation 文件：1.55021 Mbytes Page：16 Pages | Infineon 英飞凌 |   | |
IKB40N65ES5 | 650 V、40 A IGBT，带反并联二极管，采用 TO-263 封装 | Infineon 英飞凌 | | |
BIDW40N65ES5 Insulated Gate Bipolar Transistor (IGBT) Features n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Novel trench-gate field-stop technology n Optimized for conduction n Medium-speed switching n Maximum operating Tj = 175 °C n RoHS compliant* Applications n Switched-Mode Power Supplies (SMPS) n Uninterruptib | Bourns 伯恩斯 | | ||
TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode in fully isolated package 文件：1.52795 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
high Speed soft switching IGBT with full current rated RAPID 1 diode 文件：1.92495 Mbytes Page：16 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon Technologies |
21+ |
PG-TO263-3 |
6000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
HAR |
24+ |
QFP |
237 |
||||
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO263-3 |
9600 |
原装现货，欢迎询价 |
|||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
INFINEON |
23+ |
PG-TO263-3 |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
PG-TO263-3 |
7000 |
IKB40N65ES5规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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