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IKA10N60T价格
参考价格：￥6.4470
型号：IKA10N60T 品牌：Infineon 备注：这里有IKA10N60T多少钱，2025年最近7天走势，今日出价，今日竞价，IKA10N60T批发/采购报价，IKA10N60T行情走势销售排行榜，IKA10N60T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IKA10N60T | IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs • Designed for : - Variable Speed Drive for washing machines, air con | Infineon 英飞凌 |   | |
IKA10N60T | IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：515.9 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
IKA10N60T | 600 V、10 A IGBT 分立器件，带反并联二极管，采用 TO220 Full-Pak 封装 | Infineon 英飞凌 | | |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：515.9 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11.7A 30W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a | UTC 友顺 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：330.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes Page：11 Pages | WXDH 东海半导体 | |
IKA10N60T产品属性
- 类型
描述
- 型号
IKA10N60T
- 功能描述
IGBT 晶体管 LOW LOSS DuoPack 600V 10A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
TO-220 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
INFINEON/英飞凌 |
1118+ |
TO-220 |
21 |
原装现货支持BOM配单服务 |
|||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
24+ |
TO-220F(TO-220IS) |
13048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
2023+ |
TO-220F |
30000 |
全新原装正品,优势价格 |
|||
Infineon/英飞凌 |
21+ |
TO-220F(TO-220IS) |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
PG-TO220-3 |
8866 |
||||
INFINEON/英飞凌 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
INFINEON |
23+ |
TO-220F |
10065 |
原装正品,有挂有货,假一赔十 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
IKA10N60T规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
DdatasheetPDF页码索引
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