isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50 A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·DC/DC Converter ·Ldeal for high-frequency switching and synchronous rectification

Silicon N-Channel Power MOSFET

General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

Silicon N-Channel Power MOSFET

General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

Fast Switching Speed

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N-Channel MOSFET in a TO-3P Plastic Package

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High Voltage Power Supplies

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