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IGW60T120价格
参考价格：￥27.9418
型号：IGW60T120 品牌：INFINEON 备注：这里有IGW60T120多少钱，2025年最近7天走势，今日出价，今日竞价，IGW60T120批发/采购报价，IGW60T120行情走势销售排行榜，IGW60T120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IGW60T120 | Fied Stop IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.8V@IC=75A ·High Current Capability ·High Input Impedance ·Fast Swithching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·Hig | ISC 无锡固电 |   | |
IGW60T120 | Low Loss IGBT in Trench and Fieldstop technology 文件：416.49 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
IGW60T120 | Low Loss IGBT in TrenchStop and Fieldstop technology 文件：351.06 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
Low Loss IGBT in TrenchStop and Fieldstop technology 文件：351.06 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT TRENCH 1200V 100A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.5 V, 60 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGHL60T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor contr | ONSEMI 安森美半导体 | | ||
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.5 V, 60 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGHL60T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor contr | ONSEMI 安森美半导体 | | ||
IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 60 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY60T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS. Features • | ONSEMI 安森美半导体 | | ||
IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 60 A Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY60T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS. Features • | ONSEMI 安森美半导体 | | ||
Low Loss IGBT in TrenchStop and Fieldstop technology 文件：351.06 Kbytes Page：12 Pages | Infineon 英飞凌 | |
IGW60T120产品属性
- 类型
描述
- 型号
IGW60T120
- 功能描述
IGBT 晶体管 LOW LOSS IGBT TECH 1200V 60A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
5850 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
标准封装 |
9548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
23+ |
60A,1200V,不带D |
20000 |
全新原装假一赔十 |
|||
INFINEON |
24+ |
CAN |
500000 |
行业低价,代理渠道 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
32000 |
INFINEON/英飞凌全新特价IGW60T120FKSA1即刻询购立享优惠#长期有货 |
|||
INFINEON |
1822+ |
TO-247 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
INF |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
INFINEON/英飞凌 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
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IGW60T120规格书下载地址
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IGW60T120数据表相关新闻
IHD3BH681L
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2019-12-17IGW60T120FKSA1，分立半导体产品
深圳市宏世佳电子科技有限公司现货销售
2019-11-20
DdatasheetPDF页码索引
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