丝印代码：G30H603；High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

Trench and Fieldstop IGBT

DESCRIPTION · Very lowturn-offenergy · Low VCEsat · Maximum junction temperature175℃ · Low EMI APPLICATIONS · Converter swith high switching frequency · Welding converters · Uninterruptible powersupplies

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V application

丝印代码：G30EF5；High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

分立式IGBT

英飞凌的新型TRENCHSTOP™5 IGBT 技术在硬开关应用中提供无与伦比的高效性能，重新界定了“业界卓著”IGBT。该新系列是IGBT 创新的一个重大突破，以满足市场未来对高效率的需求。 • 650V 击穿电压\n• 对比英飞凌业界卓著的“HighSpeed 3”系列\n• Qg系数降低2.5倍\n• 开关损耗系数降低2倍\n• VCE (sat)减少了200mV\n• 低COES/EOSS\n• 温和正温度系数VCE (sat)\n• Vf的温度稳定性\n\n优势:\n• 具有出色的效率，降低结温和外壳温度，从而提高设备可靠性\n• 母线电压可提升50V，同时不影响可靠性\n• 更高的功率密度设计;

High speed 5 FAST IGBT in TRENCHSTOP™ 5 technology

FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freel

IGBT 分立器件

英飞凌的 TRENCHSTOP™ 5 Auto IGBT 技术重新定义了“同类最佳”IGBT，为硬开关应用提供无与伦比的效率。 新系列是 IGBT 创新的重大突破，可满足未来市场对高效率的需求。 • 650 V 击穿电压\n• 与我们的 HighSpeed 3 系列相比\n• Qg\n• 开关损耗降低 2 倍\n• VCE(sat)\n• 低 COES/EOSS\n• 温和阳性。温度。 系数。VCE(sat)\n• Vf\n 的温度稳定性;

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes Page：13 Pages

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes Page：13 Pages

650V IGBT high speed switching series fifth generation

文件：1.9361 Mbytes Page：14 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT TRENCH 650V 55A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

650V IGBT high speed switching series fifth generation

文件：1.93345 Mbytes Page：14 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT TRENCH 650V 55A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单