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IGP10N60T价格
参考价格：￥4.5114
型号：IGP10N60T 品牌：Infineon 备注：这里有IGP10N60T多少钱，2025年最近7天走势，今日出价，今日竞价，IGP10N60T批发/采购报价，IGP10N60T行情走势销售排行榜，IGP10N60T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGP10N60T | Low Loss IGBT in TrenchStop and Fieldstop technology Features: • Very low VCE(sat) 1.5V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time 5μs • Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply • TRENCHSTOP™ and Fieldstop techn | Infineon 英飞凌 |   | |
IGP10N60T | Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 60 | Infineon 英飞凌 | | |
IGP10N60T | Low Loss IGBT in TrenchStop and Fieldstop technology 文件：357.73 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
IGP10N60T | 600 V、10 A IGBT 分立器件，采用 TO220 封装 | Infineon 英飞凌 | | |
Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 60 | Infineon 英飞凌 | | ||
Low Loss IGBT in TrenchStop and Fieldstop technology 文件：357.73 Kbytes Page：12 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a | UTC 友顺 | | ||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：330.13 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 6 50V (D-S) Power MOSFET 文件：2.17857 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.33382 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
10A 600V N-channel Enhancement Mode Power MOSFET 文件：976.2 Kbytes Page：11 Pages | WXDH 东海半导体 | |
IGP10N60T产品属性
- 类型
描述
- 型号
IGP10N60T
- 功能描述
IGBT 晶体管 LOW LOSS IGBT TECH 600V 10A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
06+ |
TO-220 |
4495 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon/英飞凌 |
21+ |
PG-TO220-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
23+24 |
TO-220 |
49820 |
主营全系列二三极管、MOS场效应管、 |
|||
Infineon |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
Infineon/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
INFINEON |
23+ |
10A,600V,不带D |
20000 |
全新原装假一赔十 |
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IGP10N60T规格书下载地址
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DdatasheetPDF页码索引
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