200 m / 600 V GaN half-bridge with fast accurate isolated gate drivers

Features • Two 200 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers Source / sink driving current up to 1 / 2 A Application- configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small chann

140 ㏁ / 600 V GaN half-bridge with fast accurate isolated gate drivers

Features • Two 140 ㏁ GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers Source / sink driving current up to 1 / 2 A Application-configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small channel-