CIPOS™ Mini

Features Package  Fully isolated dual in-line molded module  Very low thermal resistance due to DCB substrate  Lead-free terminal plating; RoHS compliant Inverter  TRENCHSTOP™ IGBTs for inverter  Rugged SOI gate driver technology with stability against transient and negative voltage

Dual In-Line PFC integrated Intelligent Power Module 3?-bridge 600V/15A, Single phase PFC 650V/30A

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CIPOS ™ Mini 600 V，15 A PFC集成三相智能功率模块

封装/外壳：24-PowerDIP 模块（1.028"，26.10mm） 包装：卷带（TR） 描述：IFPS MODULE 650V 30A 24PWRDIP 分立半导体产品 功率驱动器模块

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

600V 15A a MOS power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

600V 15A a MOS Power Transistor

General Description The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-