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IDW12G65C5价格
参考价格：￥27.2526
型号：IDW12G65C5 品牌：Infineon 备注：这里有IDW12G65C5多少钱，2026年最近7天走势，今日出价，今日竞价，IDW12G65C5批发/采购报价，IDW12G65C5行情走势销售排行榜，IDW12G65C5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDW12G65C5 | 650V SiC thinQ!??Generation 5 diodes Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of | INFINEON 英飞凌 |   | |
IDW12G65C5 | 采用 real2pin 封装的 650 V 碳化硅肖特基二极管 | INFINEON 英飞凌 | | |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. 文件：1.17536 Mbytes Page：11 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-247-3 包装：散装 描述：DIODE SCHOTTKY 650V 12A TO247-3 分立半导体产品 二极管 - 整流器 - 单 | INFINEON 英飞凌 | | ||
封装/外壳：TO-247-3 包装：管件 描述：DIODE SCHOTTKY 650V 12A TO247-3 分立半导体产品 二极管 - 整流器 - 单 | INFINEON 英飞凌 | | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of | INFINEON 英飞凌 | | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of | INFINEON 英飞凌 | | ||
650V SiC thinQ!??Generation 5 diodes Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of | INFINEON 英飞凌 | | ||
Silicon Carbide Diode 文件：1.17456 Mbytes Page：11 Pages | INFINEON 英飞凌 | | ||
Silicon Carbide Diode 文件：1.16285 Mbytes Page：11 Pages | INFINEON 英飞凌 | |
IDW12G65C5产品属性
- 类型
描述
- 型号
IDW12G65C5
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
ThinQ!a?￠ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON |
两年内 |
NA |
112 |
实单价格可谈 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Infineon/英飞凌 |
2025+ |
PG-TO247-3 |
8000 |
||||
INFINEON |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON |
25+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
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IDW12G65C5数据表相关新闻
IDT82V2041EPPG
IDT82V2041EPPG
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IDT821054APF
2023-6-1IDT82P2281PFG
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2023-4-25IE122312-5
SC250ER SC307NR SC616CPR SC616N-BTR SC616Q PK-20N38PQ SC628AHR SNP428 ZA016LDCT ZA028LACT ZT016LDSR9R ZT028LACTG ZT028LACTR15 ZT028LAFP1R ZT028LDCTB ZT028LDCTR30 TE082305-1 TE122001-7 P50011-1 IE092705-1
2021-4-27IE122403-1
IE122403-1 TP164009-2 P09070-1 MSO320R IP503012-1 IP125012-1 TE162005-2 TE082703-2 TE122401-4 TE102803-1 IE162312-2 IP233412-1 MSR516NJR IP412812-2 TP094003-1 TP244009-1 MSS5MMD IE220406-1 TE092703-6 MSS5MMX IE122305-2 MSS5MMP TE162006-1 TP103210-1 P35026-1
2021-4-27IDW20G65C5B Infineon 肖特基二极管与整流器 SIC DIODES
INFINEON/英飞凌 IDW20G65C5B 深圳市佳杰伟业科技有限公司 大量现货
2020-11-17
DdatasheetPDF页码索引
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