型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V65603S100PFI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

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IDT

IDT71V65603S100PFI

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

256K x 36, 512K x 18 3.3V Synchronous ZBT™ SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high performance system speed - 150MHz (3.8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (

RENESAS

瑞萨

IDT71V65603S100PFI产品属性

  • 类型

    描述

  • 型号

    IDT71V65603S100PFI

  • 功能描述

    IC SRAM 9MBIT 100MHZ 100TQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M(64M x 8)

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

更新时间:2025-11-19 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
BGA
8540
只做原装正品现货或订货假一赔十!
IDT
原厂封装
9800
原装进口公司现货假一赔百
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一级代理/放心采购
IDT
25+
8
全新原装!优势库存热卖中!
IDT
QFP100
3162
正品原装--自家现货-实单可谈
IDT
22+
BGA
5000
全新原装现货!自家库存!
IDT
25+
BGA
81
百分百原装正品 真实公司现货库存 本公司只做原装 可
IDT
23+
NA
1218
原装正品代理渠道价格优势
IDT
NEW
100TQFP
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IDT
22+
100TQFP
9000
原厂渠道,现货配单

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