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型号 功能描述 生产厂家 企业 LOGO 操作
IDT71V416YS10PHI

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

RENESAS

瑞萨

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

RENESAS

瑞萨

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

IDT

IDT71V416YS10PHI产品属性

  • 类型

    描述

  • 型号

    IDT71V416YS10PHI

  • 功能描述

    IC SRAM 4MBIT 10NS 44TSOP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M(64M x 8)

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

更新时间:2026-5-19 20:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
10+
TO220
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INFINEON/英飞凌
24+
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500
全新原装只做原装
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
Infineon
原厂封装
9800
原装进口公司现货假一赔百
INFINEON
24+
TO-220
8000
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INFINEON/英飞凌
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INF
26+
标准封装
890000
一级总代理商原厂原装大批量现货 一站式服务
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INF
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INFINEON/英飞凌
24+
TO-220
8000
新到现货,只做全新原装正品

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