CoolSiC™ Schottky Diode

The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The low V f values characterizing this family of products, make it particularly suitable for applications requiring high load efficiency. With the Generation 2 Infineon introduced a new design ·Benchmark switching behavior\n ·No reverse recovery charge\n ·Temperature independent switching behavior\n ·High operating temperature (T j max 175°C);

2nd Generation thinQ SiC Schottky Diode

文件：241.06 Kbytes Page：7 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：DIODE SCHOTTKY 600V 5.6A TO252-3 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W1) • No fo

Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W1) • No fo

STEALTHT M II Rectifier

文件：242.81 Kbytes Page：5 Pages

2nd generation thinQ SiC Schottky Diode

文件：58.8 Kbytes Page：4 Pages