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型号	功能描述	生产厂家&企业	LOGO
IC41LV1665	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-25K	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-25KI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-25T	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-25TI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-30K	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-30KI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-30T	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-30TI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-35K	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-35KI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-35T	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-35TI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-40KI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-40T	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IC41LV1665-40TI	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI
IS41LV1665	64K x16 bit Dynamic RAM with Fast Page Mode DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes	ICSI	ICSI

IC41LV1665供应商更多...

更新时间：2025-8-14 11:54:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IC41LV44002-50T	ICSI	2016+	TSOP24	6000	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市美思瑞电子科技有限公司	IC41LV44002-50T	ICSI	22+	TSOP24	12245	现货,原厂原装假一罚十!	询价
深圳市莱克讯科技有限公司	IC41LV44002-50T	原装	1922+	TSOP24	8900	公司原装现货特价长期供货欢迎来电咨询	询价
深圳市威尔健半导体有限公司	IC41LV44002-50T	ICSI	23+	SOP24	50000	全新原装正品现货,支持订货	询价
深圳市佳鑫美电子科技有限公司	IC41LV4400250T	ICSI	24+	SOJ24	2789	全新原装!绝对有货!	询价
深圳市一线半导体有限公司	IC41LV44002-50T	ICSI	24+	TSSOP24	2000		询价
深圳市星佑电子有限公司	IC41LV44002-50T	ICSI	03/04+	QFP	1815	全新原装100真实现货供应	询价
深圳市鹏和科技有限公司	IC41LV44002-50T	ICSI	24+	SOP24	5000	只做原装公司现货	询价
深圳市英卓尔科技有限公司	IC41LV44002-50T	ICSI	20+	TSOP24	2960	诚信交易大量库存现货	询价
京海半导体(深圳)有限公司	IC41LV44002-50T	ICSI	21+	TSSOP24	10000	原装现货假一罚十	询价

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IC41LV1665规格书下载地址

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2024-1-17
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联系人张生电话19926428992 QQ1924037095
2021-8-26
IAM-20680HP
IAM-20680HP
2020-12-24
IC42S16100
SDRAM 16 bit 动态随机存取存储器 , BGA-54 SDRAM 动态随机存取存储器 , SDRAM 32 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3 动态随机存取存储器 , 512 Mbit SDRAM 32 bit 133 MHz - 40 C 动态随机存取存储器 , 512 Mbit TSOP-54 SDRAM 16 bit 动态随机存取存储器
2020-7-8
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深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
2019-11-19
IC5205BM5-150mA低噪声LDO稳压器
概述 MIC5205是一种高效的线性稳压器超低噪声输出，非常低压差（通常在17mV轻载和165mV在150mA），和非常低的地面电流（100mA输出600μA）。 MIC5205提供了更好的超过1％的初始精度。特别是手持，电池供电设备设计，该MIC5205包括一个CMOS或TTL兼容启用/关断控制输入。关机时，功耗下降至接近零。稳压器接地电流增大只是稍微在辍学，进一步延长电池寿命。MIC5205的主要功能包括一个基准旁路脚提高其已经出色的低噪声性能，反相电池保护，电流限制，并过热关机。该MIC5205可在固定和可调输出在一个小型SOT- 23 -5封装电压版本。对于低压差稳
2013-1-27

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IC41LV1665供应商更多...

IC41LV1665芯片相关品牌

IC41LV1665规格书下载地址

IC41LV1665参数引脚图相关

IC41LV1665数据表相关新闻

IAM-20680HT

IC:SY6874DBC/DFN3×3-10/矽力杰/HF原装现货

IAM-20680HP

IC42S16100

ICC05-042-360G原装现货

IC5205BM5-150mA低噪声LDO稳压器

DdatasheetPDF页码索引