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型号	功能描述	生产厂家企业	LOGO
IC41C16100A	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100A-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100A-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100A-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100A-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100AS-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor	ICSI	ICSI
IC41C16100S	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45KG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45KIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45TG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-45TIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50KG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50KIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50TG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-50TIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60KG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60KIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60TG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16100S-60TIG	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2	ICSI	ICSI
IC41C16105	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-50K	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-50KI	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-50T	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-50TI	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-60K	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-60KI	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-60T	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105-60TI	1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE [ICSI] DESCRIPTION The ICSI IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IC41C16105S	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-50K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-50KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-50T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-50TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-60K	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-60KI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-60T	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16105S-60TI	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ICSI IC41C16105S and IC41LV16105S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,	ICSI	ICSI
IC41C16256	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25K	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25KG	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25KI	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25KIG	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25T	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI
IC41C16256-25TG	256Kx16 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10	ICSI	ICSI

替换型号	功能描述	生产厂家企业	LOGO
CA3010	Cascadable Amplifier 10 to 2500 MHz	MACOM	MACOM
CA3010	Cascadable Amplifier 10 to 2500 MHz	MACOM	MACOM
CA3010	Cascadable Amplifier 10 kHz to 2500 MHz	MA-COM	MA-COM
CA3010A	Operational Amplifiers	HARRIS	HARRIS
CA3015A	Operational Amplifiers	HARRIS	HARRIS
NTE903	Integrated Circuit Operational Amplifier	NTE	NTE

IC41产品属性

类型
描述
型号
IC41
制造商
Distributed By MCM
功能描述
RELAY/OVERLOAD

IC41供应商更多...

更新时间：2025-12-27 17:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	IC41C16100S-50	ICSI	25+	TSOP	2789	全新原装!绝对有货!	询价
深圳市振宏微科技有限公司	IC41C16100S-50K	INTEGRATEDS	23+	原厂封装	9888	专做原装正品,假一罚百!	询价
深圳市恒达亿科技有限公司	IC41C16100S-50K	ISSI	25+	SOJ	3000	全新原装、诚信经营、公司现货销售	询价
深圳市华斯顿科技有限公司	IC41C16100S-50T	ICSI	25+23+	TSOP44	24496	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	IC41C16100S-50K	ICSI	22+	SOJ-42	8000	原装正品支持实单	询价
贸泽芯城（深圳）电子科技有限公司	IC41C16100AS-50T	ICSI	23+	TSOP	4000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市一线半导体有限公司	IC41C16100S-50K	ICSI	24+	SOJ	35		询价
深圳市科恒伟业电子有限公司	IC41C16100S-50T	ICSI	2450+	TSOP44	9850	只做原厂原装正品现货或订货假一赔十!	询价
标准国际(香港)有限公司	IC41C16100S50T	ICSI	25+		10	公司优势库存热卖中!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IC41C16100S-50T	ICSI	25+	MSOP10	18000	原厂直接发货进口原装	询价

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IAM-20680HT
进口代理
2024-1-17
IC:SY6874DBC/DFN3×3-10/矽力杰/HF原装现货
联系人张生电话19926428992 QQ1924037095
2021-8-26
IAM-20680HP
IAM-20680HP
2020-12-24
IC42S16100
SDRAM 16 bit 动态随机存取存储器 , BGA-54 SDRAM 动态随机存取存储器 , SDRAM 32 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3 动态随机存取存储器 , 512 Mbit SDRAM 32 bit 133 MHz - 40 C 动态随机存取存储器 , 512 Mbit TSOP-54 SDRAM 16 bit 动态随机存取存储器
2020-7-8
ICC05-042-360G原装现货
深圳市大唐盛世半导体有限公司手机：17727572380 。电话：0755-83226739 Q Q:626839837。微信号：15096137729
2019-11-19
IC5205BM5-150mA低噪声LDO稳压器
概述 MIC5205是一种高效的线性稳压器超低噪声输出，非常低压差（通常在17mV轻载和165mV在150mA），和非常低的地面电流（100mA输出600μA）。 MIC5205提供了更好的超过1％的初始精度。特别是手持，电池供电设备设计，该MIC5205包括一个CMOS或TTL兼容启用/关断控制输入。关机时，功耗下降至接近零。稳压器接地电流增大只是稍微在辍学，进一步延长电池寿命。MIC5205的主要功能包括一个基准旁路脚提高其已经出色的低噪声性能，反相电池保护，电流限制，并过热关机。该MIC5205可在固定和可调输出在一个小型SOT- 23 -5封装电压版本。对于低压差稳
2013-1-27

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IC41参数引脚图相关

IC41数据表相关新闻

IAM-20680HT

IC:SY6874DBC/DFN3×3-10/矽力杰/HF原装现货

IAM-20680HP

IC42S16100

ICC05-042-360G原装现货

IC5205BM5-150mA低噪声LDO稳压器

DdatasheetPDF页码索引