isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) ≤6.4Ω. • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(on) ≤6.4Ω. • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS(ON)= 5.6Ω(typ.) • Highforward transferadmittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS = 10 V,ID= 1 mA)

Switching Regulator Applications

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