位置:H5TQ2G63GFR-TEL > H5TQ2G63GFR-TEL详情
H5TQ2G63GFR-TEL中文资料
H5TQ2G63GFR-TEL数据手册规格书PDF详情
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
9 and 10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
Commercial Temperature( 0oC ~ 95 oC)
Industrial Temperature( -40oC ~ 95 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Hynix |
2020+ |
DDR3256Mx8PC1333 |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HYNIX |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
HYNIX |
2023+ |
BGA |
6895 |
原厂全新正品旗舰店优势现货 |
|||
HYNIX |
24+ |
NA/ |
38 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HYNIX |
2223+ |
BGA |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
HYNIX |
23+ |
NA |
36 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
HYNIX |
18+ |
BGA |
85600 |
保证进口原装可开17%增值税发票 |
|||
HYNIX |
1836+ |
BGA |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
HYNIX |
2017+ |
BGA |
11750 |
原装正品,诚信经营 |
|||
HYNIX |
24+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
H5TQ2G63GFR-TEL 资料下载更多...
H5TQ2G63GFR-TEL 芯片相关型号
- 281-3836-ND
- 602EN16-6
- 602EN24-6B
- 602EN550
- 74610704
- CRCW1210MF0EF
- CY8C24894-24L
- H5TQ2G63GFR-H9C
- H5TQ2G63GFR-H9I
- H5TQ2G63GFR-H9J
- H5TQ2G63GFR-H9L
- H5TQ2G63GFR-PBC
- H5TQ2G63GFR-PBI
- H5TQ2G63GFR-PBJ
- H5TQ2G63GFR-PBL
- H5TQ2G63GFR-RDC
- H5TQ2G63GFR-RDI
- H5TQ2G63GFR-RDJ
- H5TQ2G63GFR-RDL
- H5TQ2G63GFR-TEC
- H5TQ2G63GFR-TEI
- H5TQ2G63GFR-TEJ
- K4A4G045WE-BCRCT000
- K4A4G085WD
- K4A4G085WE
- PEF32001VTV1.1
- PEF32001VV1.1
- PEF32002VTV1.1
- ST4SI2M0020TPIFW
- ST4SIM-200M
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Hynix Semiconductor 海力士半导体
Hynix Semiconductor,现更名为SK hynix,是一家总部位于韩国的全球领先半导体制造商,成立于1983年。公司主要专注于开发和生产存储器产品,包括动态随机存取存储器(DRAM)、闪存(NAND Flash)和其他半导体组件。SK hynix在电子行业中以其高性能和高容量的存储解决方案而闻名。 作为全球第二大DRAM制造商和第三大NAND Flash制造商,SK hynix在过去几十年中不断进行技术创新和产品开发,以满足不断增长的市场需求。公司致力于研发下一代存储技术,并在智能手机、服务器、个人计算机和数据中心等多个领域提供解决方案。 SK hynix还注重环境可持续性和社会