位置:H5TQ2G63GFR-RDI > H5TQ2G63GFR-RDI详情
H5TQ2G63GFR-RDI中文资料
H5TQ2G63GFR-RDI数据手册规格书PDF详情
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
9 and 10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase 0 oC~ 95 oC)
- 7.8 μs at 0oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
Commercial Temperature( 0oC ~ 95 oC)
Industrial Temperature( -40oC ~ 95 oC)
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• 8 bit pre-fetch
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX(海力士) |
21+ |
BGA |
12588 |
原装现货,量大可定 |
|||
HYNIX |
2022+ |
BGA |
8000 |
||||
SK HYNIX |
21+ |
BGA |
10000 |
全新原装 公司现货 价优 |
|||
SK HYNIX |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
SKHYNIX |
2020+ |
BGA |
650 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SKHYNIX |
2018+ |
BGA |
6528 |
承若只做进口原装正品假一赔十! |
|||
SKHYNIX |
22+ |
1609 |
43730 |
原装正品现货 |
|||
SKHYNIX |
24+ |
BGA |
20000 |
不忘初芯-只做原装正品 |
|||
SKHYNIX |
22+ |
BGA |
20000 |
保证原装正品,假一陪十 |
|||
SKHYNIX |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
H5TQ2G63GFR-RDI 资料下载更多...
H5TQ2G63GFR-RDI 芯片相关型号
- 2SC2881
- 74610704
- 7499611420
- 7499611420_V01
- 74AHCT3G04DC
- CRCW1210MF0EF
- EKY-100ELL222MJ30S
- EKY-100ELL272MM15S
- EKY-100ETD222MK20S
- H5TQ2G63GFR-H9C
- H5TQ2G63GFR-H9I
- H5TQ2G63GFR-H9J
- H5TQ2G63GFR-H9L
- H5TQ2G63GFR-PBC
- H5TQ2G63GFR-PBI
- H5TQ2G63GFR-PBJ
- H5TQ2G63GFR-PBL
- H5TQ2G63GFR-RDC
- H5TQ2G63GFR-RDJ
- H5TQ2G63GFR-RDL
- H5TQ2G63GFR-TEC
- H5TQ2G63GFR-TEI
- H5TQ2G63GFR-TEJ
- H5TQ2G63GFR-TEL
- K4A4G045WE-BCRCT000
- K4A4G085WD
- K4A4G085WE
- K4A4G085WF
- K4A4G165WE-BCRCT00
- K4A4G165WE-BCWE
Datasheet数据表PDF页码索引
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Hynix Semiconductor 海力士半导体
Hynix Semiconductor,现更名为SK hynix,是一家总部位于韩国的全球领先半导体制造商,成立于1983年。公司主要专注于开发和生产存储器产品,包括动态随机存取存储器(DRAM)、闪存(NAND Flash)和其他半导体组件。SK hynix在电子行业中以其高性能和高容量的存储解决方案而闻名。 作为全球第二大DRAM制造商和第三大NAND Flash制造商,SK hynix在过去几十年中不断进行技术创新和产品开发,以满足不断增长的市场需求。公司致力于研发下一代存储技术,并在智能手机、服务器、个人计算机和数据中心等多个领域提供解决方案。 SK hynix还注重环境可持续性和社会