General Description

The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features

Output IP3: +25 dBm

P1dB: +17 dBm

Gain: 24 dB

Supply Voltage: +5 V

50 Ohm Matched Input/Output

Die Size: 3.2 x 1.42 x 0.1 mm

Typical Applications

This HMC-ABH241 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

• Military & Space