General Description

The HMC-ABH209 is a high dynamic range, two stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 55 and 65 GHz. The HMCABH209 provides 13 dB of gain, and an output power of +16 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH209 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Features

Output IP3: +25 dBm

P1dB: +16 dBm

Gain: 13 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 2.2 x 1.22 x 0.1 mm

Typical Applications

This HMC-ABH209 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

• Military & Space