GaAs PIN photodiode array

Photodiode array for data communication

Features

● Active area: φ0.06 mm

Element pitch: 250 µm

4-element array

● High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]

at low bias voltage (VR=2 V)

● Low dark current, low capacitance

● Up to 16 elements available as option

Applications

● Optical fiber communications

● High-speed data link