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HZS2B3

SILICON EPITAXIAL PLANER ZENER DIODES

SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

SEMTECH_ELEC

先之科半导体

HZS2B3

稳压二极管

STMICROELECTRONICS

意法半导体

HZS2B3

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

文件:56.36 Kbytes Page:7 Pages

RENESAS

瑞萨

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

MCC

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

RENESAS

瑞萨

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

HITACHIHitachi Semiconductor

日立日立公司

MIXERS TRIPLE-BALANCED

文件:45.24 Kbytes Page:2 Pages

SYNERGY

HZS2B3产品属性

  • 类型

    描述

  • VZT_Min(V):

    2.1

  • VZT_Max(V):

    2.3

  • VZT_IZT(mA):

    5

  • ZZT_(Ω) @IZT:

    100

  • Package Outline:

    DO-34

HZS2B3数据表相关新闻