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HZ12价格

参考价格：￥0.1497

型号：HZ1206C202R-10 品牌：LAIRD 备注：这里有HZ12多少钱，2026年最近7天走势，今日出价，今日竞价，HZ12批发/采购报价，HZ12行情走势销售排行榜，HZ12报价。

型号	功能描述	生产厂家企业	LOGO
HZ12	ZENER DIODES FEATURES : * Low leakage, low zener impedance * Maximum power dissipation of 500 mW * Ideally suited for stabilized power supply, etc. * Pb / RoHS Free	EIC	EIC
HZ12	Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12	Silicon Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12	ZENER DIODES FEATURES ◇ Silicon planar power zener diodes ◇ Standard zener voltage tolerance is ±2. Other zener voltage and tolerances are available upon request.	BILIN 银河微电	BILIN
HZ12	Silicon Planar Zener Diode for Stabilized Power Supply FEATURES Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.6 V through 38 V of zener voltage provides flexible application.	SECOS 喜可士	SECOS
HZ12	组合开关 \n● HZ12 系列电源切断开关适用于交流 50Hz 或 60Hz、电压至 550V 电路中，作为电源的切断和接通之用。\n● 符合标准：GB/T 14048.3、IEC 60947-3。\n\n	SHNT 正泰电器	SHNT
HZ12	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply	RENESAS 瑞萨	RENESAS
HZ12	Silicon Planar Zener Diode for Stabilized Power Supply 文件：99.75 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
HZ12	ZENER DIODES 文件：96.47 Kbytes Page：3 Pages	EIC	EIC
HZ12A	ZENER DIODES 50W silicon Zaner dlodns : • Hermetically sealed metal according to normalization CCTU : F10 and JEDEC DO-6. • Available wfth anode to case or cathode to case connections. • High surge capability: 300W® 10ms.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
HZ12A	Zener Diodes Zener Diodes VZ : 2.0 - 36V PD : 500mW Features Low leakage, low zener impedance Maximum power dissipation of 500 mW Ideally suitedfor stabilized power supply, etc. Pb/ RoHS Free Case: DO-35 Glass Case Weight: approx. 0.13g Mechanical Data	LUGUANG 鲁光电子	LUGUANG
HZ12A1	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12A1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12A1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12A2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12A2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12A2	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12A3	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12A3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12A3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12B	Zener Diodes Zener Diodes VZ : 2.0 - 36V PD : 500mW Features Low leakage, low zener impedance Maximum power dissipation of 500 mW Ideally suitedfor stabilized power supply, etc. Pb/ RoHS Free Case: DO-35 Glass Case Weight: approx. 0.13g Mechanical Data	LUGUANG 鲁光电子	LUGUANG
HZ12B1	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12B1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12B1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12B2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12B2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12B2	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12B3	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12B3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12B3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12BP	Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12BP	Silicon Epitaxial Planar Zener Diodes for Voltage Controller - Voltage Limitter Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12C	Zener Diodes Zener Diodes VZ : 2.0 - 36V PD : 500mW Features Low leakage, low zener impedance Maximum power dissipation of 500 mW Ideally suitedfor stabilized power supply, etc. Pb/ RoHS Free Case: DO-35 Glass Case Weight: approx. 0.13g Mechanical Data	LUGUANG 鲁光电子	LUGUANG
HZ12C1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12C1	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12C1	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12C2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12C2	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12C2	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12C3	SILICON EPITAXIAL PLANER ZENER DIODES for stabilized power supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
HZ12C3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12C3	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.	RENESAS 瑞萨	RENESAS
HZ12C3L	Silicon Epitaxial Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38 V of zener voltage provide flexibl	RENESAS 瑞萨	RENESAS
HZ12CP	Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12CP	Silicon Epitaxial Planar Zener Diodes for Voltage Controller - Voltage Limitter Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HZ12L	Silicon Epitaxial Planar Zener Diode for Low Noise Application Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38 V of zener voltage provide flexibl	RENESAS 瑞萨	RENESAS
HZ1206B601R-10	ADSP-BF506F EZ-KIT Lite짰 Evaluation System Manual 文件：1.16895 Mbytes Page：75 Pages	AD 亚德诺	AD
HZ1206C202R-00	High Impedance Ferrite Chip Beads 文件：338.24 Kbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206C202R-10	Ferrite EMI Chip Beads 文件：1.08829 Mbytes Page：4 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206C202R-10	this print is the property of laird tech 文件：143.87 Kbytes Page：1 Pages	LSTD 莱尔德	LSTD
HZ1206C202R-10	封装/外壳：1206（3216 公制）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：FERRITE BEAD 2 KOHM 1206 1LN 滤波器铁氧体磁珠和芯片	ETC 知名厂家	ETC
HZ1206C202R-10	Ferrite Chip Beads	LSTD 莱尔德	LSTD
HZ1206D102R-00	封装/外壳：1206（3216 公制）包装：散装描述：FERRITE BEAD 1 KOHM 1206 1LN 滤波器铁氧体磁珠和芯片	ETC 知名厂家	ETC
HZ1206D102R-00	High Impedance Ferrite Chip Beads 文件：338.24 Kbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206D102R-10	Ferrite EMI Chip Beads 文件：1.08829 Mbytes Page：4 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206D102R-10	this print is the property of laird tech 文件：141.72 Kbytes Page：1 Pages	LSTD 莱尔德	LSTD
HZ1206D102R-10	LAND PATTERNS FOR REFLOW SOLDERING 文件：266.85 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206E152R-00	High Impedance Ferrite Chip Beads 文件：338.24 Kbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
HZ1206E152R-10	this print is the property of laird tech 文件：156.19 Kbytes Page：1 Pages	LSTD 莱尔德	LSTD

HZ12产品属性

类型
描述
EIA PKG. SIZE：
1206
Filter Type：
Both Power and Signal Lines
Height/Thickness (inches)：
0.04
Height/Thickness (mm)：
1.10
Impedance (Ohm) at 1 GHz：
100.00
Impedance (Ohm) at 100 MHz：
915.00
Impedance (Ohm) at 25 MHz：
1673.00
Impedance (Ohm) at 500 MHz：
915.00
Lead Free：
Yes
Length (Inches)：
0.126
Length (mm)：
3.20
Moisture Sensitivity Level：
1
Operating Temperature Max (Celsius)：
125
Operating Temperature Min (Celsius)：
-40
Packaging：
Tape and Reel
Peak Impedance Freq.(MHz)：
41.00
ROHS Compliant：
Yes
Rated Current (A) Max：
0.300
Static Sensitive：
No
Typical Peak Impedance(Ω)：
2505.00
Width(inches)：
0.063
Width(mm)：
1.60

HZ12供应商更多...

更新时间：2026-5-14 17:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	HZ12B2	RENESAS	23+	NA	3058	专做原装正品,假一罚百!	询价
深圳市鸿昌盛电子科技有限公司	HZ12C2LTD-E	RENESAS	25+		2500	公司现货库存	询价
深圳市华斯顿科技有限公司	HZ1206B601R-00		25+23+		30151	绝对原装正品全新进口深圳现货	询价
深圳市安罗世纪电子有限公司	HZ12A1TA	RENESAS	2023+	SMD	5000	安罗世纪电子只做原装正品货	询价
深圳市豪迈兴电子有限公司	HZ12C3	HIT	24+	NA	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市一线半导体有限公司	HZ12B3TDLL34-12V-3	RENESAS瑞萨/HITACHI日立	24+	LL-34SOD-80	21200	新进库存/原装	询价
深圳市毅创腾电子科技有限公司	HZ12C1LTA-E	RENESAS		DO35	3000	正品原装--自家现货-实单可谈	询价
深圳市凌旭科技有限公司	HZ1206C202R-10	STEWARD	2016+	SMD	93000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市向鸿伟业电子有限公司	HZ12A1TA-E	RENESAS/瑞萨	24+	DO-35	13000	原装,现货,正品,热卖	询价
深圳市中联芯电子有限公司	HZ12A1	RENESAS	25+	原厂原装	10065	原装正品,有挂有货,假一赔十	询价

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找IC，尽在114IC

HZ12价格

HZ12产品属性

HZ12供应商更多...

HZ12芯片相关品牌

HZ12规格书下载地址

HZ12参数引脚图相关

HZ12数据表相关新闻

HYM8563T CMOS实时时钟芯片

HY681690

I/O连接器10112633-121LF原装现货

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HYG260P03LR1S

DdatasheetPDF页码索引