8M x 8-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

8M x 8-Bit Dynamic RAM

8M x 8-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

8M x 8-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

8M x 8-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM opera

8M x 8-Bit Dynamic RAM

This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in SIEMENS/IBM’s most advanced first generation 64Mbit CMOS silicon gate process technology. Preliminary Information • 8 388 608 words by 8-bit organization • 0 to 70 ˚C operating temperature • Fast ac