位置：首页 > IC中文资料第224页 > HY51
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode MOSFET Features 125V/300A RDS(ON) 2.9 m2 (typ.) @VGs 10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) | HOOYI 后羿半导体 |   | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
4M x 4Bit EDO DRAM DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page M | Hynix 海力士 | | ||
4M x 4Bit EDO DRAM DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page M | Hynix 海力士 | | ||
1M x 16Bit EDO DRAM DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page | Hynix 海力士 | | ||
N-Channel Enhancement Mode MOSFET 文件：626.89 Kbytes Page：11 Pages | HUAYI 华羿微电 | | ||
N-Channel Enhancement Mode MOSFET | HUAYI 华羿微电 | | ||
场效应管(MOSFET) | HUAYI 华羿微电 | | ||
Single N MOSFET(85V~125V) | HUAYI 华羿微电 | | ||
N-Channel Enhancement Mode MOSFET 文件：626.89 Kbytes Page：11 Pages | HUAYI 华羿微电 | | ||
1M x 4-bit CMOS DRAM 文件：916.74 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：804.34 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1Mx4, Fast Page mode 文件：100.76 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1M x 4-bit CMOS DRAM 文件：916.74 Kbytes Page：18 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | | ||
4M x 16Bit EDO DRAM 文件：96.6 Kbytes Page：11 Pages | Hynix 海力士 | |
HY51产品属性
- 类型
描述
- 型号
HY51
- 制造商
AEARO
- 功能描述
HYGIENE KIT OPTIME I DEFENDER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
24+ |
NA/ |
60 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HY |
TSOP20 |
46 |
全新原装进口自己库存优势 |
||||
HYUNDAI |
25+ |
TSOP24 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
HYN |
23+ |
NA |
1085 |
专做原装正品,假一罚百! |
|||
KOREA |
23+ |
SMD |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HYUNDAI |
24+ |
SOJ-24 |
653 |
||||
HYUNDAI |
22+ |
TSOP |
2000 |
原装正品现货 |
|||
HYNIX |
99+ |
SOJ-24 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
22+ |
SOJ-24 |
20000 |
公司只做原装 品质保障 |
|||
HYNIX |
25+ |
SOJ-24 |
1000 |
主营内存芯片 全新原装正品 |
HY51规格书下载地址
HY51参数引脚图相关
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- HY5116100AR-60
- HY5116100AR-50
- HY5116100AJ-70
- HY5116100AJ-60
- HY5116100AJ-50
- HY5110W
- HY5110A
- HY5100-016M
- HY5100-014Z
- HY5100-014R
- HY5100-014M
- HY5100-012Z
- HY5100-012R
- HY5100-012M
- HY5100-010Z
- HY5100-010R
- HY5100-010M
- HY50-P_06
- HY50-P/SP1
- HY50-P
- HY50P
- HY5003
- HY5001-040M
- HY5001-035Z
- HY5001-035R
- HY5001-035M
- HY5001-030Z
- HY5001-030R
- HY5001-030M
- HY5001-025Z
- HY5001-025R
- HY5001-025M
- HY-5
- HY4N70T
- HY4N70M
- HY4N70D
- HY4N65T
- HY4N65D
- HY4N60T
- HY4N60D
- HY4903P
- HY4903B
- HY46XX
- HY4504W
- HY4504P
- HY4504A
- HY4306P
- HY4306B
- HY4231
- HY4222
- HY4145
HY51数据表相关新闻
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HY3208P ，全新原装当天发货或门市自取0755-82732291.
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2019-2-25
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