L-Band GaAs Power FET

Description The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. Features • High Output Power: P1dB=37 dBm (typ.) • High Gain: GL=11.5 dB (typ.) • High Efficiency: PAE =45 (typ.)

L-Band Power FET Non-Via Hole Chip

L-Band GaAs Power FET

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Single Stage Primary Side Regulation PFC Controller For LED Driver

General Description The AP1682 is a high performance AC/DC universal input Primary Side Regulation Power Factor Controller for LED driver applications. The device uses Pulse Frequency Modulation (PFM) technology to regulate output current while achieving high power factor and low THD. The AP1682

Thin Panel Dome Plugs

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Shorty Plugs

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Premier Supplier of Electronic Hardware

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Thin Panel Dome Plugs

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