Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance. (C = 0.43 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Low operation current. • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

Diodes>Switching

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Features • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Low operation current. • Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.

Diodes>Switching

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTORS

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

Bias Resistor Transistor

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