Silicon Epitaxial Planar Pin Diode for Antenna Switching

Feature • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C1 = 1.0 pF max) • Low forward resistance. (rf = 0.7 Ω max) • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.

Silicon Epitaxial Planar Pin Diode for Antenna Switching

文件：150.78 Kbytes Page：5 Pages

Diodes>Switching

Silicon Epitaxial Planar Pin Diode for Antenna Switching

文件：150.78 Kbytes Page：5 Pages

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages

3-Ampere Adjustable Negative Regulators

文件：268.49 Kbytes Page：10 Pages