型号 功能描述 生产厂家 企业 LOGO 操作

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

ONSEMI

安森美半导体

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

RENESAS

瑞萨

56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Fairchild

仙童半导体

56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

Intersil

HUF76137产品属性

  • 类型

    描述

  • 型号

    HUF76137

  • 功能描述

    MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-31 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
TO-263
36800
FAIRCHILD
NEW
TO-263
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ITS
25+
QFN
18000
原厂直接发货进口原装
INTERSIL
2402+
TO-263AB
8324
原装正品!实单价优!
FAIRCHILD
2025+
TO-263
4835
全新原厂原装产品、公司现货销售
ITS
05+
原厂原装
351
只做全新原装真实现货供应
ITS
23+
TO-263
5000
原装正品,假一罚十
INTERSIL
TO-263AB
68500
一级代理 原装正品假一罚十价格优势长期供货
INTERSIL
25+
TO-263
2987
绝对全新原装现货供应!
LT
23+
NA
6500
全新原装假一赔十

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