位置：首页 > IC中文资料第1557页 > HUF7613
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Intersil |   | ||
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di | Fairchild 仙童半导体 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | Fairchild 仙童半导体 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | Intersil | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | Intersil | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de | Fairchild 仙童半导体 | | ||
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | Intersil | | ||
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d | Fairchild 仙童半导体 | | ||
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Fairchild 仙童半导体 | | ||
75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th | Intersil | | ||
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | RENESAS 瑞萨 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | RENESAS 瑞萨 | | ||
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | ONSEMI 安森美半导体 | | ||
3M??Tamper-Evident Label Materials 文件：553.53 Kbytes Page：4 Pages | 3M | | ||
Integrated consumer electronics control 文件：366.13 Kbytes Page：14 Pages | AD 亚德诺 | | ||
Low Power HDMI to LVDS Display Bridge 文件：301.31 Kbytes Page：13 Pages | AD 亚德诺 | | ||
LVDS Display Bridge 文件：311.37 Kbytes Page：13 Pages | AD 亚德诺 | | ||
Low Power HDMI to LVDS Display Bridge 文件：301.31 Kbytes Page：13 Pages | AD 亚德诺 | |
HUF7613产品属性
- 类型
描述
- 型号
HUF7613
- 功能描述
MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INTERSIL |
2025+ |
TO263 |
5000 |
原装进口价格优 请找坤融电子! |
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INTERSIL |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD |
23+ |
SOT-263 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
05+ |
TO-263 |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
23+ |
SOT-263 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
SOT-263 |
304 |
|||||
INTERSI |
25+ |
TO263 |
721 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCHILD |
2023+ |
SMD |
9606 |
安罗世纪电子只做原装正品货 |
HUF7613规格书下载地址
HUF7613参数引脚图相关
- igzo
- igbt驱动电路
- IGBT模块
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- HUM-70
- HUM-40F
- HUM-40
- HUM3004
- HUM3003
- HUM3002
- HUM2020
- HUM2015
- HUM2010
- HUM2001
- HUL7207
- HUL7203
- HUL7202
- HUL7001
- HUL6273
- HUKIT40
- HUKIT30
- HUKIT20
- HUGD-50
- HUGD50
- HUF76143P3
- HUF76139S3STK
- HUF76139S3ST
- HUF76139S3S
- HUF76139S3
- HUF76139P3_NS2552
- HUF76139P3
- HUF76137S3ST
- HUF76137S3S
- HUF76137S3
- HUF76137P3
- HUF76132SK8T
- HUF76132SK8
- HUF76132S3ST
- HUF76132S3S
- HUF76132S3
- HUF76132P3
- HUF76131SK8T_NB82084
- HUF76131SK8T
- HUF76131SK8
- HUF76129S3STK
- HUF76129S3ST
- HUF76129S3S
- HUF76129S3
- HUF76129P3
- HUF76129D3ST
- HUF76129D3S
- HUF76129D3
- HUF76122P3
- HUF76121SK8T
- HUF76121SK8
- HUF76121S3ST
- HUF76121S3S
- HUF76121S3
- HUF76121P3
- HUF76121D3ST
- HUF76121D3S
- HUF76121D3
- HUF76113T3ST
- HUF76113SK8T
- HU968
- HU664DS
- HU663DS
- HU661DS
- HU603AL
- HU553
- HU551
- HU465
- HU464DS
- HU464
- HU463
- HU462EI
- HU462DS
- HU462
- HU368R
- HU368
- HU367R
- HU367
- HU366SS
- HU366R
HUF7613数据表相关新闻
HUFA76645S3ST
HUFA76645S3ST
2021-11-9HUF76645S3S
HUF76645S3S
2021-11-9HUF75645S3ST
HUF75645S3ST
2021-11-9HUF75645S3ST
HUF75645S3ST
2021-11-9HTU21D温度传感器
HTU21D 原装正品
2019-4-22HV100-3针热插拔，浪涌电流限制器控制器
特点 33％，比SOT- 232的小型 通行证元素是唯一的外部部分 没有意义的电阻 自动适应*通元 短路保护* 紫外线和POR监控电路 2.5S自动重试 ±10V至±72V输入电压范围 0.6毫安典型工作电源电流 内置交流干扰路径打开钳 应用 - 48V局端交换（线卡） +48 V的服务器网络 +48 V的存储区域网络 +48 V的外围设备，路由器，交换机 +2
2013-1-6
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
