10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di

10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the di

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Video signal switcher

Video signal switcher The BA7613N and BA7613F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 75Ωdriver. The ICs designed for use in video cassette recorders, and feature a large dynamic range and wide operating frequency range. Sync-tip clamp inputs make this an ideal

Video signal switcher

Video signal switcher The BA7613N and BA7613F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 75Ωdriver. The ICs designed for use in video cassette recorders, and feature a large dynamic range and wide operating frequency range. Sync-tip clamp inputs make this an ideal

Video signal switcher

Video signal switcher The BA7613N and BA7613F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 75Ωdriver. The ICs designed for use in video cassette recorders, and feature a large dynamic range and wide operating frequency range. Sync-tip clamp inputs make this an ideal

I-CHIP AM/FM RADIO IC

DESCRIPTION UTC TA7613AP Is A One-Chip AM/FM Radio Integrated Circuit That Is Suitable For Portable Radio Applications. It Includes AM Amplifier, Local OSC, AM Mixer, AM/FM Amplifier, AM AGE, FM AGE Circuit And Also Class B Audio Power Amplifier. FEATURES * Low External Components Count. * Wid

12-Bit, Voltage Output DIGITAL-TO-ANALOG CONVERTER

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